Time resolution and efficiency of SPADs and SiPMs for photons and charged particles

Abstract

We give an analytic treatment of the time resolution and efficiency of Single Photon Avalanche Diodes (SPADs) and Silicon Photomultipliers (SiPMs). We provide closed-form expressions for structures with uniform electric fields and efficient numerical prescriptions for arbitrary electric field configurations. We discuss the sensor performance for single photon detection and also for charged particle detection.

References in corpus (1)

• The statistics of electron-hole avalanches

Cited by in corpus (6)

• Passive quenching, signal shapes, and space charge effects in SPADs and SiPMs
• Direct detection of charged particles with SiPMs
• The statistics of electron-hole avalanches
• Efficient and precise Cherenkov-based charged particle timing using SiPMs
• Development of a Cherenkov-Based Time-of-Flight Detector Using Silicon Photomultipliers
• Test Beam Characterization of a Digital Silicon Photomultiplier