paper

Semiconductors and Dirichlet-to-Neumann maps

arXiv:2101.09248 · doi:10.1590/S0101-82052006000200005

Abstract

We investigate the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by the stationary voltage-current (VC) map. The related inverse problem correspond to the inverse problem for the Dirichlet-to-Neumann (DN) map with partial data.

13 pages, 2 figures

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Semiconductors and Dirichlet-to-Neumann maps · wovepaper