Semiconductors and Dirichlet-to-Neumann maps
arXiv:2101.09248 · doi:10.1590/S0101-82052006000200005
Abstract
We investigate the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by the stationary voltage-current (VC) map. The related inverse problem correspond to the inverse problem for the Dirichlet-to-Neumann (DN) map with partial data.
13 pages, 2 figures