Kondo-assisted switching between three conduction states in capacitively coupled quantum dots

Abstract

We propose a nanoscale device consisting of a double quantum dot with strong intra- and inter- dot Coulomb repulsions. In this design, the current can only flow through the lower dot, but is triggered by the gate-controlled occupancy of the upper dot. At low temperatures, our calculations predict the double dot to pass through a narrow Kondo regime, resulting in highly sensitive switching characteristics between three well-defined states : insulating, normal conduction and resonant conduction.

5 pages, 4 figures

References in corpus (4)

• The Kondo effect in C${}_{60}$ single-molecule transistors
• Thermoelectric transport through strongly correlated quantum dots
• Coulomb blockade and Kondo effect in a few-electron silicon/silicon-germanium quantum dot
• Extension of the Non-Crossing Approximation for the Anderson Model with Finite Coulomb Repulsion

Cited by in corpus (2)

• Thermoelectric properties of a double quantum dot out of equilibrium in Kondo and intermediate valence regimes
• Role of asymmetry in thermoelectric properties of a double quantum dot out of equilibrium