Local Measurements of Shubnikov-de Haas Oscillations in Graphene Systems
arXiv:2101.01840
Abstract
Shubnikov-de Haas (SdH) oscillations, the most well-known magneto-oscillations caused by the quantization of electron energy levels in the presence of magnetic fields in two-dimensional (2D) electron systems, can be used to determine Fermi-surface properties and directly measure the Berry phase of the 2D systems. It is usually thought that transport measurements are required to measure the SdH oscillations. Contradicting this belief, we demonstrate that the SdH oscillations can be measured in graphene systems by carrying out scanning tunneling spectroscopy (STS) measurements. The energy-momentum dispersions and Berry phases of monolayer, Bernal-stacked bilayer, and ABC-stacked trilayer graphene are obtained according to the measured SdH oscillations in the STS spectra. It is possible to obtain the SdH oscillations when the size of the 2D systems is larger than the magnetic length and, importantly, no gate electrode is required in the STS measurement, therefore, the reported method in this work is applicable to a wide range of materials.
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References in corpus (6)
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Scanning Tunneling Spectroscopy of Graphene on Graphite
- Bulk Fermi surface coexistence with Dirac surface state in BiSe: a comparison of photoemission and Shubnikov-de Haas measurements
- Shubnikov-de Haas oscillations in YBa_2Cu_4O_8
- Anomalous Fermi surface in FeSe seen by Shubnikov-de Haas oscillation measurements
- Landau Quantization in Graphene Monolayer, Bernal Bilayer, and Bernal Trilayer on Graphite Surface