Multilayer Haldane model
arXiv:2101.01068 · doi:10.1016/j.ssc.2022.114863
Abstract
We propose the model of layered materials, in which each layer is described by the conventional Haldane model, while the inter - layer hopping parameter corresponds to the ABC stacking. We calculate the topological invariant for the resulting model, which is responsible for the conductivity of intrinsic quantum Hall effect. It has been shown that in a certain range of the values of interlayer hopping parameter, the value of is equal to the number of layers multiplied by the topological invariant of each layer. At the same time this value may be calculated using the low energy effective theory.
arXiv commentLatex, 14 pages, 3 figures
References in corpus (15)
- Topological Field Theory of Time-Reversal Invariant Insulators
- Experimental realisation of the topological Haldane model
- Landau level degeneracy and quantum Hall effect in a graphite bilayer
- Fractional quantum Hall states at zero magnetic field
- Electronic states and Landau levels in graphene stacks
- Fractional quantum Hall effect in the absence of Landau levels
- Electronic structure of multilayer graphene
- Chern-Simons Currents and Chiral Fermions on the Lattice
- Geometrical engineering of a two-bands Chern insulator in two dimensions with arbitrary topological index
- Flat bands with higher Chern number in pyrochlore slabs
- Distant-Neighbor Hopping in Graphene and Haldane Models
- Influence of interactions on the anomalous quantum Hall effect
- Hall conductivity as the topological invariant in phase space in the presence of interactions and non-uniform magnetic field
- Determinants of Block Matrices with Noncommuting Blocks
- Anomalous fractional quantum Hall effect and multi-valued Hamiltonians