Tunable Electronic Properties and Large Rashba Splittings Found in Few-Layer Bi$_2$Se$_3$/PtSe$_2$ Van der Waals Heterostructures

Shahid Sattar; J. Andreas Larsson

doi:10.1021/acsaelm.0c00638

paper

Tunable Electronic Properties and Large Rashba Splittings Found in Few-Layer Bi $_{2}$ Se $_{3}$ /PtSe $_{2}$ Van der Waals Heterostructures

arXiv:2012.07445 · doi:10.1021/acsaelm.0c00638

Abstract

We use first-principles calculations to show that van der Waals (vdW) heterostructures consisting of few-layer Bi $_{2}$ Se $_{3}$ and PtSe $_{2}$ exhibit electronic and spintronics properties that can be tuned by varying the constituent layers. Type-II band alignment with layer-tunable band gaps and type-III band alignment with spin-splittings have been found. Most noticeably, we reveal the coexistence of Rashba-type spin-splittings (with large $α_{R}$ parameters) in both the conduction and valence band stemming from few-layer Bi $_{2}$ Se $_{3}$ and PtSe $_{2}$ , respectively, which has been confirmed by spin-texture plots. We discuss the role of inversion symmetry breaking, changes in orbital hybridization and spin-orbit coupling in altering electronic dispersion near the Fermi level. Since low-temperature growth mechanisms are available for both materials, we believe that few-layer Bi $_{2}$ Se $_{3}$ /PtSe $_{2}$ vdW heterostructures are feasible to realize experimentally, offering great potential for electronic and spintronics applications.

Tunable Electronic Properties and Large Rashba Splittings Found in Few-Layer Bi2​Se3​/PtSe2​ Van der Waals Heterostructures

Abstract

References in corpus (4)

Tunable Electronic Properties and Large Rashba Splittings Found in Few-Layer Bi $_{2}$ Se $_{3}$ /PtSe $_{2}$ Van der Waals Heterostructures