Absence of a Dirac gap in ferromagnetic Cr(BiSb)Te
arXiv:2012.05884 · doi:10.1063/5.0039059
Abstract
Magnetism breaks the time reversal symmetry expected to open a Dirac gap in 3D topological insulators that consequently leads to quantum anomalous Hall effect. The most common approach of inducing ferromagnetic state is by doping magnetic 3 elements into bulk of 3D topological insulators. In Cr(BiSb)Te, the material where the quantum anomalous Hall effect was initially discovered at temperatures much lower than the ferromagnetic transition, , the scanning tunneling microscopy studies have reported a large Dirac gap meV. The discrepancy between the low temperature of quantum anomalous Hall effect () and large spectroscopic Dirac gaps () found in magnetic topological insulators remains puzzling. Here, we used angle-resolved photoemission spectroscopy to study the surface electronic structure of pristine and potassium doped surface of Cr(BiSb)Te. Upon potassium deposition, the -type surface state of pristine sample was turned into an -type, allowing spectroscopic observation of Dirac point. We find a gapless surface state, with no evidence of a large Dirac gap reported in tunneling studies.
7 pages, 3 figures
References in corpus (6)
- Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
- Quantized Anomalous Hall Effect in Magnetic Topological Insulators
- Momentum-Resolved Landau-Level Spectroscopy of Dirac Surface State in Bi2Se3
- Imaging Dirac-Mass Disorder from Magnetic Dopant-Atoms in the Ferromagnetic Topological Insulator Cr(BiSb)Te
- Dirac mass generation from crystal symmetry breaking on the surfaces of topological crystalline insulators
- Coexistence of Surface Ferromagnetism and Gapless Topological State in MnBiTe