Weak Anti-localization in thin films of the Topological Semimetal Candidate Pd${}_3$Bi${}_2$S${}_2$

Abstract

We report the growth and magneto-transport studies of Pd${}_3$Bi${}_2$S${}_2$ (PBS) thin films synthesized by pulsed laser deposition (PLD) technique. The magneto-transport study on pristine and post annealed films show the presence of more than one type of charge carrier with a carrier concentration in the range $0.6$ - $2.26\times$ 10${}^{21}$ cm${}^{-3}$ and mobility in the range 0.96 - 1.73 $\times$ 10${}^2$ cm${}^2$/Vs. At low temperatures a logarithmic increase in conductivity is observed which indicates the presence of weak anti-localization (WAL). The magnetotransport data is analysed within the Hikami-Larkin-Nagaoka (HLN) theory. It is found that temperature dependence of the dephasing length can't be explained only by electron-electron scattering and that electron-phonon scattering also contributes to the phase relaxation mechanism in PBS films.

7 pages, 8 figures, 1 Table