Epitaxial stabilization of SrCu$_3$O$_4$ with infinite Cu$_{3/2}$O$_2$ layers

Hiroshi Takatsu; Masayuki Ochi; Naoya Yamashina; Morito Namba; Kazuhiko Kuroki; Takahito Terashima; Hiroshi Kageyama

doi:10.1021/acs.inorgchem.0c01213

paper

Epitaxial stabilization of SrCu $_{3}$ O $_{4}$ with infinite Cu $_{3/2}$ O $_{2}$ layers

arXiv:2012.02433 · doi:10.1021/acs.inorgchem.0c01213

Abstract

We report the epitaxial thin film synthesis of SrCu $_{3}$ O $_{4}$ with infinitely stacked Cu $_{3}$ O $_{4}$ layers composed of edge-sharing CuO $_{4}$ square-planes, using molecular beam epitaxy. Experimental and theoretical characterizations showed that this material is a metastable phase that can exist by applying tensile biaxial strain from the (001)-SrTiO $_{3}$ substrate. SrCu $_{3}$ O $_{4}$ shows an insulating electrical resistivity in accordance with the Cu $^{2 +}$ valence state revealed X-ray photoelectron spectroscopy. First-principles calculations also indicated that the unoccupied $d_{3 z^{2} - r^{2}}$ band becomes substantially stabilized owing to the absence of apical anions, in contrast to $A_{2}$ Cu $_{3}$ O $_{4}$ Cl $_{2}$ ( $A =$ Sr, Ba) with an $A_{2}$ Cl $_{2}$ block layer and therefore a trans-CuO $_{4}$ Cl $_{2}$ octahedron. These results suggest that SrCu $_{3}$ O $_{4}$ is a suitable parent material for electron-doped superconductivity based on the Cu $_{3}$ O $_{4}$ plane.

1 column, 22 pages, 6 figures, Supporting Information

References in corpus (1)

Hole-Doped Cuprate High Temperature Superconductors

Epitaxial stabilization of SrCu3​O4​ with infinite Cu3/2​O2​ layers

Abstract

References in corpus (1)

Epitaxial stabilization of SrCu $_{3}$ O $_{4}$ with infinite Cu $_{3/2}$ O $_{2}$ layers