Light effect on the interface resistance of BaSrTiO/LaMnO heterosctructure
arXiv:2012.01801
Abstract
The effect of green and ultraviolet laser light on BaSrTiO/LaMnO heterostructure electrical resistance was studied. In 80-200 K range illumination induces transient resistance component at ~15% of the steady-state value, the time constant associated with the transient component is ~12 s. The negative photoresistance effect is found under green, infrared and ultraviolet illumination.
arXiv comment14 pages, 3 figures
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