Measurement of $p-n$-junction diode behavior under large signal and high frequency

Abstract

Measurements of diode dynamic conductance and dynamic capacitance for frequencies up to $10\times {\tau }_{p,n}^{-1}$, and voltage amplitude level up tp 100 mV was carried out with a precision impedancemeter. The results were compared with the theoretical expressions obtained with the spectral approach to the charge carrier transport in $p-n$-junctions. This experimental confirmation is of practical interest, as one can use the theory to extract device parameters, such as: relaxation time ${\tau }_{p,n}$, and junction injection coefficient. These experiments were carried to test the extension of the conventional $p-n$-junction theory.

7 pages, 7 figures, International Symposium on Microelectronics Technology and Devices, 2014, Aracaju, Brasil. Proceedings of the SBMicro 2014, 2014