Inverse problems for semiconductors: models and methods
arXiv:2011.12800 · doi:10.1007/978-0-8176-4554-0
Abstract
We consider the problem of identifying discontinuous doping profiles in semiconductor devices from data obtained by different models connected to the voltage-current map. Stationary as well as transient settings are discussed and a framework for the corresponding inverse problems is established. Numerical implementations for the so-called stationary unipolar and stationary bipolar cases show the effectiveness of a level set approach to tackle the inverse problem.
33 pages, 6 figures. arXiv admin note: text overlap with arXiv:2011.11370
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