Giant energy storage effect in nanolayer capacitors charged by the field emission tunneling

Abstract

We fabricate nanolayer alumina capacitor and apply high electric fields, close to 1 GV/m, to inject charges in the dielectric. Asymmetric charge distributions have been achieved due to the selectivity of the quantum tunneling process. Namely, the electrons cannot tunnel to a region near cathode, where the total energy would be less than the potential energy. This mechanism exhibits a strong tendency to populate charge traps located near the anode, i.e., the regions where their potential energy is the lowest. This charge injection allows a permanent storage of the bulk charge even if the capacitor plates are short-circuited, provided that the temperature is sufficiently low so that the conductivity of the dielectric is negligible. In our experiments, the total charge stored in the dielectric was up to seven and a half times higher than the charge stored on the capacitor plates. Also, measurements of the breakdown voltage show that the breakdown electric field, i.e., the dielectric strength, is independent of the thickness of the dielectric.

arXiv comment11 pages, 6 figures

References in corpus (4)

• Thickness Dependence of the Physical Properties of Atomic-Layer Deposited Al2O3
• Large energy storage efficiency of the dielectric layer of graphene nanocapacitors
• Coulomb barrier creation by means of electronic field emission in nanolayer capacitors
• Reversed Photoeffect in Transparent Graphene Nanocapacitors