Measurement of the transmission secondary electron yield of nanometer-thick films in a prototype Timed Photon Counter

Abstract

We measure the transmission secondary electron yield of nanometer-thick Al${}_2$O${}_3$/TiN/Al${}_2$O${}_3$ films using a prototype version of a Timed Photon Counter (TiPC). We discuss the method to measure the yield extensively. The yield is then measured as a function of landing energy between $1.2$ and $1.8$ keV and found to be in the range of $0.1$ ($1.2$ keV) to $0.9$ ($1.8$ keV). These results are in agreement to data obtained by a different, independent method. We therefore conclude that the prototype TiPC is able to characterise the thin films in terms of transmission secondary electron yield. Additionally, observed features which are unrelated to the yield determination are interpreted.

This is the Accepted Manuscript version of an article accepted for publication in Journal of Instrumentation. Neither SISSA Medialab Srl nor IOP Publishing Ltd is responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1748-0221/15/10/P10022

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