Topological phase transition induced by band structure modulation in a Chern insulator
arXiv:2010.09631 · doi:10.1088/1361-648X/abe798
Abstract
Here we study the systematic evolution of the topological properties of a Chern insulator in presence of an electronic dispersion that can be tuned smoothly from being Dirac-like till a semi-Dirac one and beyond. The band structure under such controlled deformation shows that the two Dirac points approach each other, merge at an intermediate point (the point), where the low energy spectrum turns gapless, shows anisotropic Dirac features in the -space and is denoted as the semi-Dirac limit, however a gap eventually opens up again in the spectrum. The Chern number phase diagram obtained via integrating the Berry curvature over the Brillouin zone (BZ) shows a gradual shrinking of the 'topological' lobes, and vanishes just beyond the semi-Dirac limit of the electronic dispersion. Thus there is a phase transition from a topological phase to a trivial phase across the semi-Dirac point. The vanishing of the anomalous Hall conductivity plateau and the merger of the chiral edge states with the bulk bands near the point provide robust support of the observed phase transition.
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- Band engineered bilayer Haldane model: Evidence of multiple topological phase transitions
- Photoinduced metallic Volkov-Pankratov states in semi-Dirac material
- Tunable plasmon modes and topological transitions in single- and bilayer semi-Dirac materials