Defect trapping and phase separation in chemically doped bulk AgF2
arXiv:2010.01843 · doi:10.1021/acs.inorgchem.0c02970
Abstract
We report a computational survey of chemical doping of silver(II) fluoride, an oxocuprate analog. We find that the ground-state solutions exhibit strong tendency for localization of defects and for phase separation. The additional electronic states are strongly localized and the resulting doped phases exhibit insulating properties. Our results, together with previous insight from experimental attempts, indicate that chemical doping may not be a feasible way towards high-temperature superconductivity in bulk silver(II) fluoride.
14 pages and 6 pages of supplement, 8 figures and 1 Table