Low-Temperature Thermopower in CoSbS

Abstract

We report giant thermopower S = 2.5 mV/K in CoSbS single crystals, a material that shows strong high-temperature thermoelectric performance when doped with Ni or Se. Changes of low temperature thermopower induced by magnetic field point to mechanism of electronic diffusion of carriers in the heavy valence band. Intrinsic magnetic susceptibility is consistent with the Kondo- Insulator-like accumulation of electronic states around the gap edges. This suggests that giant thermopower stems from temperature-dependent renormalization of the non-interacting bands and buildup of the electronic correlations on cooling.

6 pages, 4 figures

References in corpus (7)

• On the thermoelectricity of correlated electrons in the zero-temperature limit
• Anisotropy and large magnetoresistance in narrow gap semiconductor FeSb2
• Thermoelectric Response Near the Density Driven Mott Transition
• Kondo Insulator description of spin state transition in FeSb2
• Electronic thermoelectric power factor and metal-insulator transition in FeSb2
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