Seeded growth of high-quality transition metal dichalcogenide single crystals via chemical vapor transport

Abstract

Transition metal dichalcogenides (TMDs) are van der Waals layered materials with sizable and tunable bandgaps, offering promising platforms for two-dimensional electronics and optoelectronics. To this end, the bottleneck is how to acquire high-quality single crystals in a facile and efficient manner. As one of the most widely employed method of single-crystal growth, conventional chemical vapor transport (CVT) generally encountered problems including the excess nucleation that leads to small crystal clusters and slow growth rate. To address these issues, a seed crystal is introduced to suppress the nucleation and an inner tube is adopted as both a separator and a flow restrictor, favoring the growth of large-size and high-quality TMD single crystals successfully. Three examples are presented, the effective growth of millimeter-sized MoSe2 and MoTe2 single crystals, and the greatly shortened growth period for PtSe2 single crystal, all of which are synthesized in high quality according to detailed characterizations. The mechanism of seeded CVT is discussed. Furthermore, a phototransistor based on exfoliated multi-layered MoSe2 displays excellent photoresponse in ambient conditions, and considerably rapid rise and fall time of 110 and 125 us are obtained. This work paves the way for developing a facile and versatile method to synthesize high-quality TMD single crystals in laboratory, which could serve as favorable functional materials for potential low-dimensional optoelectronics.

References in corpus (11)

• Weyl and Dirac Semimetals in Three Dimensional Solids
• Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
• Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2
• High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects
• Spectroscopic evidence for type II Weyl semimetal state in MoTe2
• Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe${}_2$
• Experimental Realization of Type-II Dirac Fermions in PdTe${}_2$ Superconductor
• Type-II Dirac fermions in the PtSe${}_2$ class of transition metal dichalcogenides
• Experimental evidence of type-II Dirac fermions in PtSe2
• Nontrivial Berry phase and type II Dirac transport in layered material PdTe2
• High quality atomically thin PtSe2 films grown by molecular beam epitaxy

Cited by in corpus (3)

• Growth of Pure and Intercalated ZrTe2, TiTe2 and HfTe2 Dichalcogenide Single Crystals by Isothermal Chemical Vapor Transport
• Incoherent phonon transport dominates heat conduction across van der Waals superlattices
• Orientation- and pressure-dependence of the vibrational response of a monolayer crystal on a vicinal diamond surface