Quantum criticality and multiple crossing points in the magnetoresistance of thin TiN-films

Abstract

We have measured $R(T,B)$ of a TiN thin-film very close to the disorder-driven superconductor-insulator transition but still superconducting at zero field and low temperatures. In a magnetic field we find three distinct crossing point of the magnetoresistance isotherms occur at magnetic fields $B_{cX}$ in three different temperature regions. Each crossing point in $R(T,B)$ corresponds to a plateau in $R(T,B_{cX})$. We systematically study the evolution of these crossing point near the disorder-induced superconductor/insulator transition, identify the most promising candidate for a quantum phase transition, and provide estimates for the two critical exponents $z$ and $\nu$.

5 pages, 5 figures plus supplement

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• Electric Field Control of the LaAlO${}_3$/SrTiO${}_3$ Interface Ground State
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Cited by in corpus (1)

• Interplay between superconducting fluctuations and weak localization in disordered TiN thin films