Nanoscale control of LaAlO3/SrTiO3 metal-insulator transition using ultra-low-voltage electron-beam lithography

Abstract

We describe a method to control the insulator-metal transition at the LaAlO3/SrTiO3 interface using ultra-low-voltage electron beam lithography (ULV-EBL). Compared with previous reports that utilize conductive atomic-force-microscope lithography (c-AFM), this approach can provide comparable resolution (~10 nm) at write speeds (10 mm/s) that are up to 10,000x faster than c-AFM. The writing technique is non-destructive and the conductive state is reversible via prolonged exposure to air. Transport properties of representative devices are measured at milli-Kelvin temperatures, where superconducting behavior is observed. We also demonstrate the ability to create conducting devices on graphene/LaAlO3/SrTiO3 heterostructures. The underlying mechanism is believed to be closely related to the same mechanism regulating c-AFM-based methods.

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References in corpus (4)

• Magnetic effects at the interface between nonmagnetic oxides
• Electric Field Control of the LaAlO${}_3$/SrTiO${}_3$ Interface Ground State
• Pascal conductance series in ballistic one-dimensional LaAlO${}_3$/SrTiO${}_3$ channels
• Novel photo-conducting state and its perturbation by electrostatic fields in oxide-based two-dimensional electron gas

Cited by in corpus (3)

• Nanoscale control of the metal-insulator transition at LAO/KTO (110) and LAO/KTO (111) interfaces
• Nanoscale ferroelectric programming of van der Waals heterostructures
• Surface acoustic wave generation and detection in quantum paraelectric regime of SrTiO${}_3$-based heterostructure