Tuning transport coefficients of monolayer $\mathrm{MoS}{\mathrm{i}}_2{\mathrm{N}}_4$ with biaxial strain

Abstract

Experimentally synthesized $\mathrm{MoS}{\mathrm{i}}_2{\mathrm{N}}_4$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020)}) is a piezoelectric semiconductor. Here, we systematically study the large biaxial (isotropic) strain effects (0.90 to 1.10) on electronic structures and transport coefficients of monolayer $\mathrm{MoS}{\mathrm{i}}_2{\mathrm{N}}_4$ by density functional theory (DFT). With $a/a_0$ from 0.90 to 1.10, the energy band gap firstly increases, and then decreases, which is due to transformation of conduction band minimum (CBM). Calculated results show that the $\mathrm{MoS}{\mathrm{i}}_2{\mathrm{N}}_4$ monolayer is mechanically stable in considered strain range. It is found that the spin-orbital coupling (SOC) effects on Seebeck coefficient depend on the strain. In unstrained $\mathrm{MoS}{\mathrm{i}}_2{\mathrm{N}}_4$, the SOC has neglected influence on Seebeck coefficient. However, the SOC can produce important influence on Seebeck coefficient, when the strain is applied, for example 0.96 strain. The compressive strain can change relative position and numbers of conduction band extrema (CBE), and then the strength of conduction bands convergence can be enhanced, to the benefit of n-type $Z{T}_e$. Only about 0.96 strain can effectively improve n-type $Z{T}_e$. Our works imply that strain can effectively tune the electronic structures and transport coefficients of monolayer $\mathrm{MoS}{\mathrm{i}}_2{\mathrm{N}}_4$, and can motivate farther experimental exploration.

7 pages,7 figures

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Cited by in corpus (2)

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