High-Mobility Carriers Induced by Chemical Doping in the Candidate Nodal-Line Semimetal CaAgP

Abstract

We report the electronic properties of single crystals of candidate nodal-line semimetal CaAgP. The transport properties of CaAgP are understood within the framework of a hole-doped nodal-line semimetal. In contrast, Pd-doped CaAgP shows a drastic increase of magnetoresistance at low magnetic fields and a strong decrease of electrical resistivity at low temperatures probably due to weak antilocalization. Hall conductivity data indicated that the Pd-doped CaAgP has not only hole carriers induced by the Pd doping, but also high-mobility electron carriers in proximity of the Dirac point. Electrical resistivity of Pd-doped CaAgP also showed a superconducting transition with onset temperature of 1.7-1.8 K.

6 pages, 3 figures, accepted for publication in Phys. Rev. B

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Cited by in corpus (3)

• Nodal-line semimetals and their variance
• Topological Semimetal KAlGe with Novel Electronic Instability
• Broken time-reversal symmetry detected by tunneling spectroscopy of superconducting Pd-doped CaAgP