Role of chemical pressure on the electronic and magnetic properties of spin-1/2 kagome mineral averievite
arXiv:2008.04966 · doi:10.1103/PhysRevB.102.125106
Abstract
We investigate the electronic and magnetic properties of the kagome mineral averievite (CsCl)CuVO and its phosphate analog (CsCl)CuPO using first-principles calculations. The crystal structure of these compounds features Cu kagome layers sandwiched between Cu-P/Cu-V honeycomb planes, with pyrochlore slabs made of corner-sharing Cu-tetrahedra being formed. The induced chemical pressure effect upon substitution of V by P causes significant changes in the structure and magnetic properties. Even though the in-plane antiferromagnetic (AFM) coupling (J) within the kagome layer is similar in the two materials, the inter-plane AFM coupling (J) between kagome and honeycomb layers is five times larger in the P-variant increasing the degree of magnetic frustration in the constituting Cu-tetrahedra.
7 pages, 8 figures
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Cited by in corpus (4)
- Magnetic terahertz resonances above the Néel temperature in the frustrated kagome antiferromagnet averievite
- Cascade of phase transitions and large magnetic anisotropy in a triangle-kagome-triangle trilayer antiferromagnet
- Bulk Crystal Growth and Single-Crystal-to-Single-Crystal Phase Transitions in the Averievite CsClCu5V2O10
- Crystal structure, magnetic and resonant properties of decorated spin kagome system (CsCl)CuAsO