Magnetic Multilayer Edges in Bernal-Stacked Hexagonal Boron Nitride
arXiv:2007.15245 · doi:10.1103/PhysRevB.102.155419
Abstract
Single-layer -BN is known to have edges with unique magnetism, however, in the commonly fabricated multilayer --BN, edge relaxations occur that create interlayer bonds and eliminate the unpaired electrons at the edge. Recently, a robust method of growing the unconventional Bernal-stacked -BN (AB--BN) has been reported. Here, we use theoretical approaches to investigate the nitrogen-terminated zigzag edges in AB--BN that can be formed in a controlled fashion using a high-energy electron beam. We find that these "open" edges remain intact in bilayer and multilayer AB--BN, enabling researchers potentially to investigate these edge states experimentally. We also investigate the thermodynamics of the spin configurations at the edge by constructing a lattice model that is based on parameters extracted from a set of first-principles calculations. We find that the edge spins in neighboring layers interact very weakly, resulting in a sequence of independent spin chains in multilayer samples. By solving this model using Monte Carlo simulations, we can determine nm-scale correlation lengths at liquid-N temperatures and lower. At low temperatures, these edges may be utilized in magnetoresistance and spintronics applications.
References in corpus (14)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Spintronics: Fundamentals and applications
- Optimized norm-conserving Vanderbilt pseudopotentials
- Selective Molecular Sieving through Porous Graphene
- Emergence of magnetism in graphene materials and nanostructures
- Magnetic Correlations at Graphene Edges
- Stacking and Registry Effects in Layered Materials: The Case of Hexagonal Boron Nitride
- The Stacking in Bulk and Bilayer Hexagonal Boron Nitride
- Magnetic Boron Nitride Nanoribbons with Tunable Electronic Properties
- Bipolar Magnetic Semiconductors: A New Class of Spintronics Materials
- Heterostructures of graphene and hBN: electronic, spin-orbit, and spin relaxation properties from first principles
- Electronic and Magnetic Properties of Zigzag Boron-Nitride Nanoribbons with Even and Odd-line Stone-Wales (5-7 pair) Defects
- Theory of Ferroelectric ZrO Monolayers on Si
- Electron Beam-Induced Nanopores in Bernal-Stacked Hexagonal Boron Nitride