Statistics of adatom diffusion in a model of thin film growth
arXiv:2007.12554 · doi:10.1103/PhysRevE.102.012805
Abstract
We study the statistics of the number of executed hops of adatoms at the surface of films grown with the Clarke-Vvedensky (CV) model in simple cubic lattices. The distributions of this number, , are determined in films with average thicknesses close to and monolayers for a broad range of values of the diffusion-to-deposition ratio and of the probability that lowers the diffusion coefficient for each lateral neighbor. The mobility of subsurface atoms and the energy barriers for crossing step edges are neglected. Simulations show that the adatoms execute uncorrelated diffusion during the time in which they move on the film surface. In a low temperature regime, typically with , the attachment to lateral neighbors is almost irreversible, the average number of hops scales as , and the distribution of that number decays approximately as . Similar decay is observed in simulations of random walks in a plane with randomly distributed absorbing traps and the estimated relation between and the density of terrace steps is similar to that observed in the trapping problem, which provides a conceptual explanation of that regime. As the temperature increases, crosses over to another regime when , which indicates high mobility of all adatoms at terrace borders. The distributions change to simple exponential decays, due to the constant probability for an adatom to become immobile after being covered by a new deposited layer. At higher temperatures, the surfaces become very smooth and , which is explained by an analogy with submonolayer growth.
References in corpus (10)
- 1/f Noise and Extreme Value Statistics
- Submonolayer Epitaxy Without A Critical Nucleus
- Anomalous Size Dependence of Relaxational Processes
- Scaling in reversible submonolayer deposition
- Thin film growth models with long surface diffusion lengths
- Crossover from compact to branched films in electrodeposition with surface diffusion
- Optimal detrended fluctuation analysis as a tool for the determination of the roughness exponent of the mounded surfaces
- Domain formation in the deposition of thin films of two-component mixtures
- Modeling of nonequilibrium surface growth by a limited mobility model with distributed diffusion length
- Effects of a kinetic barrier on limited-mobility interface growth models
Cited by in corpus (4)
- Roughness and Correlations in the Transition from Island to Film Growth: Simulations and Application to CdTe Deposition
- Lattice gas study of thin film growth scenarios and transitions between them: Role of substrate
- Probing growth precursor diffusion lengths by inter-surface diffusion
- Interplay of orientational order and roughness in simulated thin film growth of anisotropically interacting particles