The Coulomb impurity in 2D materials with strong spin-orbit interaction
arXiv:2007.11372 · doi:10.1002/pssb.202000501
Abstract
We show that the spin-orbit interaction (SOI) produced by the Coulomb fields of charged impurities provides an efficient mechanism for the bound states formation. The mechanism can be realized in 2D materials with sufficiently strong Rashba SOI provided that the impurity locally breaks the structure inversion symmetry in the direction normal to the layer.
arXiv comment4 pages, 3 figures
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