Magnetization generated by microwave-induced Rashba interaction
arXiv:2007.04122 · doi:10.1103/PhysRevB.102.075419
Abstract
We show that a controllable dc magnetization is accumulated in a junction comprising a quantum dot coupled to non-magnetic reservoirs if the junction is subjected to a time-dependent spin-orbit interaction. The latter is induced by an ac electric field generated by microwave irradiation of the gated junction. The magnetization is caused by inelastic spin-flip scattering of electrons that tunnel through the junction, and depends on the polarization of the electric field: a circularly polarized field leads to the maximal effect, while there is no effect in a linearly polarized field. Furthermore, the magnetization increases as a step function (smoothened by temperature) as the microwave photon energy becomes larger than the absolute value of the difference between the single energy level on the quantum dot and the common chemical potential in the leads.
10 pages 4 figures published version https://link.aps.org/doi/10.1103/PhysRevB.102.075419
References in corpus (6)
- Electric Dipole Induced Spin Resonance in Disordered Semiconductors
- A proof of the Kramers degeneracy of transmission eigenvalues from antisymmetry of the scattering matrix
- Conversion between electron spin and microscopic atomic rotation
- Time-dependent resonant tunneling transport: Keldysh and Kadanoff-Baym nonequilibrium Green's functions in an analytically soluble problem
- Photoinduced Rashba spin to charge conversion via interfacial unoccupied state
- Direct imaging of the ac component of the pumped spin polarization with element specificity