A four-state magnetic tunnel junction switchable with spin-orbit torques
arXiv:2007.01611 · doi:10.1063/5.0014771
Abstract
We present a magnetic tunnel junction (MTJ) where its two ferromagnetic layers are in the form of a single ellipse (SE) and two-crossing ellipses (TCE). The MTJ exhibits four distinct resistance states corresponding to the four remanent states of the TCE structure. Flowing current in an underlying Ta layer generates in the adjacent TCE structure spin-orbit torques which induce field-free switching of the four-state MTJ between all its resistance states. The demonstrated four-state MTJ is an important step towards fabricating multi-level MTJs with numerous resistance states which could be important in various spintronics applications, such as multi-level magnetic random access or neuromorphic memory.
4 pages, 3 figures, This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in (Appl. Phys. Lett. 117, 072404 (2020)) and may be found at (https://aip.scitation.org/doi/10.1063/5.0014771)
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