Origin of the vortex displacement field in twisted bilayer graphene

Abstract

Model description of patterns of atomic displacements in twisted bilayer systems has been proposed. The model is based on the consideration of several dislocation ensembles, employing a language that is widely used for grain boundaries and film/substrate systems. We show that three ensembles of parallel screw dislocations are sufficient both to describe the rotation of the layers as a whole, and for the vortex-like displacements resulting from elastic relaxation. The results give a clear explanation of the observed features of the structural state such as vortices, accompanied by alternating stacking.

6 pages, 5 figures

References in corpus (8)

• STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
• Electronic transport in polycrystalline graphene
• Lattice relaxation and energy band modulation in twisted bilayer graphenes
• The crucial role of atomic corrugation on the flat bands and energy gaps of twisted bilayer graphene at the "magic angle" $\theta \sim 1.08^{\circ }$
• Moir{é} patterns as a probe of interplanar interactions: graphene on h-BN
• Structure of twisted and buckled bilayer graphene
• Networks of ABA and ABC stacked graphene on mica observed by scanning tunneling microscopy
• Membrane amplitude and triaxial stress in twisted bilayer graphene deciphered using first-principles directed elasticity theory and scanning tunneling microscopy

Cited by in corpus (4)

• Heterostrain rules the flat-bands in magic-angle twisted graphene layers
• A topologically-derived dislocation theory for twist and stretch moiré superlattices in bilayer graphene
• Selection rules of twistronic angles in 2D material flakes via dislocation theory
• Plasmonic Quantum Dots in Twisted Bilayer Graphene