Ab Initio Modeling of Phonon-Assisted Relaxation of Electrons and Excitons in Semiconductor Nanocrystals for Multiexciton Generation
arXiv:2006.10101 · doi:10.1103/PhysRevB.103.035428
Abstract
Electron-phonon and exciton-phonon interactions in nanoclusters are formulated and computed under the framework of GW-BSE (Bethe-Salpeter equation) approach. The phonon effect is modeled with the two-particle representation for the first time. The nonradiative relaxation rates of electrons and excitons are calculated. It is uncovered that both single-phonon relaxation and multiple-phonon relaxation are significant in nanocrystals, and correspond to two types of physical processes that have totally different spectral lineshapes. Furthermore, the multiple-phonon relaxation always occurs and its rates are comparable to the corresponding single-phonon relaxation rates for both electrons and excitons in the system studied (Si46). The inelastic scattering rates of electrons and excitons are also calculated based on many-body Green function theory. For the electronic states in Si46, the inelastic scattering decay is predicted to be a primary decay mechanism for multiexciton relaxation, and nonradiative relaxation rates are larger than inelastic scattering rates for most excitonic states in Si46.
43 pages, 14 figures
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