Field-free switching of magnetic tunnel junctions driven by spin-orbit torques at sub-ns timescales
arXiv:2006.06390 · doi:10.1063/5.0011433
Abstract
We report time-resolved measurements of magnetization switching by spin-orbit torques in the absence of an external magnetic field in perpendicularly magnetized magnetic tunnel junctions (MTJ). Field-free switching is enabled by the dipolar field of an in-plane magnetized layer integrated above the MTJ stack, the orientation of which determines the switching polarity. Real-time single-shot measurements provide direct evidence of magnetization reversal and switching distributions. Close to the critical switching voltage we observe stochastic reversal events due to a finite incubation delay preceding the magnetization reversal. Upon increasing the pulse amplitude to twice the critical voltage the reversal becomes quasi-deterministic, leading to reliable bipolar switching at sub-ns timescales in zero external field. We further investigate the switching probability as a function of dc bias of the MTJ and external magnetic field, providing insight on the parameters that determine the critical switching voltage.
References in corpus (5)
- Nanosecond-timescale low error switching of in-plane magnetic tunnel junctions through dynamic Oersted-field assisted spin-Hall effect
- Spin-transfer pulse switching: From the dynamic to the thermally activated regime
- Anomalous spin-orbit torque switching due to field-like torque-assisted domain wall reflection
- Size-dependence of nanosecond-scale spin-torque switching in perpendicularly magnetized tunnel junctions
- Time-Resolved Studies of the Spin-Transfer Reversal Mechanism in Perpendicularly Magnetized Magnetic Tunnel Junctions