paper

Development of a Neutron Imaging Sensor using INTPIX4-SOI Pixelated Silicon Devices

arXiv:2006.05658 · doi:10.1016/j.nima.2020.164400

Abstract

We have developed a neutron imaging sensor based on an INTPIX4-SOI pixelated silicon device. Neutron irradiation tests are performed at several neutron facilities to investigate sensor's responses for neutrons. Detection efficiency is measured to be around $1.5$ \% for thermal neutrons. Upper bound of spatial resolution is evaluated to be $4.1 \pm 0.2 I^¼$ m in terms of a standard deviation of the line spread function.

6 pages, 7 figures, 12th International "Hiroshima" Symposium on the Development and Application of Semiconductor Tracking Detector - HSTD12