Large magnetoelectric coupling in multiferroic oxide heterostructures assembled via epitaxial lift-off

Abstract

The strain dependent functional properties of epitaxial transition metal oxide films can be significantly modified via substrate selection. However, large lattice mismatches preclude dislocation-free epitaxial growth on ferroelectric substrates, whose strain states are modified by applied electric fields. Here we overcome this mismatch problem by depositing an epitaxial film of ferromagnetic La0.7Sr0.3MnO3 on a single crystal substrate of well lattice matched SrTiO3 via a film of SrRuO3 that we subsequently dissolved, permitting the transfer of unstrained La0.7Sr0.3MnO3 to a ferroelectric substrate of 0.68Pb(Mg1/3Nb2/3)O3 0.32PbTiO3 in a different crystallographic orientation. Ferroelectric domain switching, and a concomitant ferroelectric phase transition, produced large non volatile changes of magnetization that were mediated by magnetic domain rotations at locations defined by the microstructure - as revealed via high resolution vector maps of magnetization constructed from photoemission electron microscopy data, with contrast from x-ray magnetic circular dichroism. In future, our method may be exploited to control functional properties in dislocation free epitaxial films of any composition.

References in corpus (9)

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Cited by in corpus (7)

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• Perspective: strain and strain gradient engineering in membranes of quantum materials
• Photostrictive actuators based on freestanding ferroelectric membranes
• Freestanding Thin-Film Materials
• Tailoring epitaxial growth and magnetism in La1-xSrxMnO3 / SrTiO3 heterostructures via temperature-driven defect engineering
• Freestanding single-crystal superconducting electron-doped cuprate membrane
• Chemical control of polymorphism and ferroelectricity in PbTiO3 and SrTiO3 monolayers and bilayers