Bond-breaking Induced Lifshitz Transition in Robust Dirac Semimetal $\mathbf{VA}{\mathbf{l}}_3$

Abstract

Topological electrons in semimetals are usually vulnerable to chemical doping and environment change, which restricts their potential application in future electronic devices. In this paper we report that the type-II Dirac semimetal $\mathbf{VA}{\mathbf{l}}_3$ hosts exceptional, robust topological electrons which can tolerate extreme change of chemical composition. The Dirac electrons remain intact even after a substantial part of V atoms have been replaced in the ${\mathbf{V}}_{1-\mathbf{x}}\mathbf{T}{\mathbf{i}}_{\mathbf{x}}\mathbf{A}{\mathbf{l}}_3$ solid solutions. This Dirac semimetal state ends at $x=0.35$ where a Lifshitz transition to $p$-type trivial metal occurs. The V-Al bond is completely broken in this transition as long as the bonding orbitals are fully depopulated by the holes donated from Ti substitution. In other words, the Dirac electrons in $\mathbf{VA}{\mathbf{l}}_3$ are protected by the V-Al bond whose molecular orbital is their bonding gravity center. Our understanding on the interrelations among electron count, chemical bond and electronic properties in topological semimetals suggests a rational approach to search robust, chemical-bond-protected topological materials.

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• Signature of an Ultrafast Photo-Induced Lifshitz Transition in the Nodal-Line Semimetal ZrSiTe
• Temperature-driven changes in the Fermi surface of graphite
• Magnetotransport evidence of a potential low-lying Dirac node in NbAl${}_3$