Combining phonon accuracy with high transferability in Gaussian approximation potential models
arXiv:2005.07046 · doi:10.1063/5.0013826
Abstract
Machine learning driven interatomic potentials, including Gaussian approximation potential (GAP) models, are emerging tools for atomistic simulations. Here, we address the methodological question of how one can fit GAP models that accurately predict vibrational properties in specific regions of configuration space, whilst retaining flexibility and transferability to others. We use an adaptive regularization of the GAP fit that scales with the absolute force magnitude on any given atom, thereby exploring the Bayesian interpretation of GAP regularization as an "expected error", and its impact on the prediction of physical properties for a material of interest. The approach enables excellent predictions of phonon modes (to within 0.1-0.2 THz) for structurally diverse silicon allotropes, and it can be coupled with existing fitting databases for high transferability. These findings and workflows are expected to be useful for GAP-driven materials modeling more generally.
11 pages, 6 figures, 2 tables; submitted to The Journal of Chemical Physics
References in corpus (7)
- ANI-1: An extensible neural network potential with DFT accuracy at force field computational cost
- Distribution of phonon lifetime in Brillouin zone
- A Spectral Analysis Method for Automated Generation of Quantum-Accurate Interatomic Potentials
- Machine-learning based interatomic potential for amorphous carbon
- High-Throughput Computational Screening of thermal conductivity, Debye temperature and Grüneisen parameter using a quasi-harmonic Debye Model
- Thermal physics of the lead chalcogenides PbS, PbSe, and PbTe from first principles
- Low-density silicon allotropes for photovoltaic applications