Pressure tuning of the anomalous Hall effect in the chiral antiferromagnet Mn3Ge
arXiv:2005.04967 · doi:10.1103/PhysRevMaterials.4.051401
Abstract
We report on the pressure evolution of the giant anomalous Hall effect (AHE) in the chiral antiferromagnet MnGe. The AHE originating from the non-vanishing Berry curvature in MnGe can be continuously tuned by application of hydrostatic pressure. At room temperature, the Hall signal changes sign as a function of pressure and vanishes completely at GPa. Even though the Hall conductivity changes sign upon increasing pressure, the room-temperature saturation value of 23 at 2.85 GPa is remarkably high and comparable to the saturation value at ambient pressure of about 40 . The change in the Hall conductivity can be directly linked to a gradual change of the size of the in-plane components of the Mn moments in the non-collinear triangular magnetic structure. Our findings, therefore, provide a route for tuning of the AHE in the chiral antiferromagnetic MnGe.
5 pages, 4 figures
References in corpus (5)
- Electric Field Effect in Atomically Thin Carbon Films
- Topological Weyl semimetals in the chiral antiferromagnetic materials Mn3Ge and Mn3Sn
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- Magnetic interactions in AB-stacked kagome lattices: magnetic structure, symmetry, and duality
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- Strain-tunable anomalous Hall effect in hexagonal MnTe
- Uniaxial stress tuning of the anomalous Hall effect in Mn3Ge