Pressure tuning of the anomalous Hall effect in the chiral antiferromagnet Mn3Ge

Abstract

We report on the pressure evolution of the giant anomalous Hall effect (AHE) in the chiral antiferromagnet Mn${}_3$Ge. The AHE originating from the non-vanishing Berry curvature in Mn${}_3$Ge can be continuously tuned by application of hydrostatic pressure. At room temperature, the Hall signal changes sign as a function of pressure and vanishes completely at $p=1.53$ GPa. Even though the Hall conductivity changes sign upon increasing pressure, the room-temperature saturation value of 23 ${\mathrm{\Omega }}^{-1}\mathrm{c}{\mathrm{m}}^{-1}$ at 2.85 GPa is remarkably high and comparable to the saturation value at ambient pressure of about 40 ${\mathrm{\Omega }}^{-1}\mathrm{c}{\mathrm{m}}^{-1}$. The change in the Hall conductivity can be directly linked to a gradual change of the size of the in-plane components of the Mn moments in the non-collinear triangular magnetic structure. Our findings, therefore, provide a route for tuning of the AHE in the chiral antiferromagnetic Mn${}_3$Ge.

5 pages, 4 figures

References in corpus (4)

• Electric Field Effect in Atomically Thin Carbon Films
• Topological Weyl semimetals in the chiral antiferromagnetic materials Mn3Ge and Mn3Sn
• Non-collinear Antiferromagnets and the Anomalous Hall Effect
• Electric-field control of anomalous and topological Hall effects in oxide bilayer thin films

Cited by in corpus (2)

• Pressure controlled trimerization for switching of anomalous Hall effect in triangular antiferromagnet Mn${}_3$Sn
• Design strong anomalous Hall effect via spin canting in antiferromagnetic nodal line materials