Graphene-Semiconductor Contact

Abstract

A systematic treatment of graphene-semiconductor junction is presented. Finite density of states at the Fermi level of graphene leads to exotic electronic properties at graphene-semiconductor interface. Quite generally, the Schottky-Mott limit and the sum rule of barrier heights are violated due to the internal potential of graphene. By merging the principal characteristics of semiconductor-semiconductor and metal-semiconductor junctions, the graphene-semiconductor contact may be considered as an archetype of unprecedented \emph{semimetal-semiconductor junction}. Generalized interface equations disclose the coupling of junction characteristics with the density of charge carriers in graphene. It will be shown that the well-known effect of tunable barrier height is directly related to the junction capacitance. Furthermore, the relative impact of image-force effect in the presence of barrier tunability is investigated. Experimental methods to gain built-in potential, barrier height, and capacitance of the junction are discussed in detail. Also the development of strong inversion layer at the interface of graphene-silicon samples is uncovered by analyzing experimental data.

arXiv comment11 pages, 7 figures

References in corpus (8)

• The electronic properties of graphene
• Electronic transport in two dimensional graphene
• Graphene Schottky diodes: an experimental review of the rectifying graphene/semiconductor heterojunction
• Ideal Graphene/Silicon Schottky Junction Diodes
• Rectification at Graphene-Semiconductor Interfaces: Zero-Gap Semiconductor Based Diodes
• Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials
• Tunable Schottky barrier and high responsivity in graphene/Si-nanotip optoelectronic device
• Theory of photoexcited and thermionic emission across a two-dimensional graphene-semiconductor Schottky junction