Resonant inelastic x-ray scattering study of doping and temperature dependence of low-energy excitations in La${}_{1-x}$Sr${}_x$VO${}_3$

Abstract

We present a temperature and doping dependent resonant inelastic X-ray scattering experiment at the V L${}_{2,3}$ and O K edges in La${}_{1-x}$Sr${}_x$VO${}_3$ for $x=0$ and $x=0.1$. This material is a canonical example of a compound that exhibits a filling control metal-insulator transition and undergoes orbital ordering and antiferromagnetic transitions at low temperature. Temperature dependent measurements at the V L${}_3$ edge reveal an intra-t${}_{2g}$ excitation that blueshifts by 40 meV from room temperature to 30 K at a rate that differs between the para- and antiferromagnetic phases. The lineshape can be partially explained by a purely local model using crystal field theory calculations. At $x=0.1$ the doping is shown to affect the local electronic structure primarily on the O sites, which is in disagreement with a simple Mott-Hubbard picture. We reveal the presence of phonon overtone features at the O K edge, which evidences that the low energy part of the spectrum is dominated by phonon response.