Structural and transport properties of LaSrCoNbO thin films
arXiv:2004.09162 · doi:10.1016/j.tsf.2020.138250
Abstract
We present the structural and transport properties of LaSrCoNbO ( 0.1 and 0; 0.15 and 0.3) thin films grown on (001) orientated single crystalline ceramic substrates to investigate the effect of lattice induced compressive and tensile strain. The high resolution x-ray diffraction measurements, including -2 scan, -scan, and reciprocal space mapping, affirm single phase; four-fold symmetry; good quality of deposited thin films. The atomic force micrographs confirm that these films have small root mean square roughness in the range of 0.5--7~nm. We observed additional Raman active modes in the films owing to the lowered crystal symmetry as compared to the bulk. More interestingly, the temperature dependent dc-resistivity measurements reveal that films become insulating due to induced lattice strain in comparison to bulk, however for the larger compressive strained films conductivity increase significantly owing to the higher degree of hybridization and reduction in bandwidth near the Fermi level.
submitted
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