Atomic Layer Deposition of SiO$_2$-GeO$_2$ multilayers

Jordi Antoja-Lleonart; Silang Zhou; Kit de Hond; Gertjan Koster; Guus Rijnders; Beatriz Noheda

doi:10.1063/5.0009844

paper

Atomic Layer Deposition of SiO $_{2}$ -GeO $_{2}$ multilayers

arXiv:2004.02622 · doi:10.1063/5.0009844

Abstract

Despite its interest for CMOS applications, Atomic Layer Deposition (ALD) of GeO $_{2}$ thin films, by itself or in combination with SiO $_{2}$ , has not been widely investigated yet. Here we report the ALD growth of SiO $_{2}$ /GeO $_{2}$ multilayers on Silicon substrates using a so far unreported Ge precursor. The characterization of multilayers with various periodicities reveals successful layer-by-layer growth with electron density contrast and absence of chemical intermixing, down to a periodicity of 2 atomic layers.

This manuscript has been submitted to Applied Physics Letters

References in corpus (1)

Theoretical study of the insulating oxides and nitrides: SiO2, GeO2, Al2O3, Si3N4, and Ge3N4

Atomic Layer Deposition of SiO2​-GeO2​ multilayers

Abstract

References in corpus (1)

Atomic Layer Deposition of SiO $_{2}$ -GeO $_{2}$ multilayers