Plasmon-Enhanced Interface Charge Transfer Exciton of 2D In-Plane Lateral and van Der Waals MoS${}_2$/WS${}_2$ Heterostructures

Abstract

The multi-scale computational method of combining first-principles calculation and finite element electromagnetic simulations is used to study plasmon-enhanced interlayer charge transfer (ICT) exciton of 2D lateral and van der Waals MoS2/WS2 heterostructure with 2H phase. The weak ICT excitons are observed in the 2H lateral and van der Waals MoS${}_2$/WS${}_2$ heterostructures. Theoretical results reveal the physical principle of plexciton resulting from strong coupling between plasmonic and ICT exciton. The weak CT exciton can be strongly enhanced by metal plasmon, can provide a new way to observe the weak CT exciton. Our results can promote deeper understanding of the plexciton resulting from strong coupling interaction between plasmon and exciton of lateral and van der Waals heterostructures.

References in corpus (8)

• Valley polarization in MoS2 monolayers by optical pumping
• Ultrafast Charge Transfer in Atomically Thin MoS2/WS2 Heterostructures
• Vertical Field Effect Transistor based on Graphene-WS2 Heterostructures for flexible and transparent electronics
• Observation of Long-Lived Interlayer Excitons in Monolayer MoSe2-WSe2 Heterostructures
• How to face the loss in plasmonics and metamaterials
• Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
• Interlayer Exciton Optoelectronics in a 2D Heterostructure p-n Junction
• Directional Interlayer Spin-Valley Transfer in Two-Dimensional Heterostructures