The physical limits of nanoLEDs and nanolasers for optical communications
arXiv:2003.07918 · doi:10.1109/JPROC.2019.2912293
Abstract
Nanoscale light sources are being intensively investigated for their potential to enable low-energy, high-density optical communication and sensing systems. Both nano-light-emitting diodes (nanoLEDs) and nanolasers have been considered, based on advanced nanophotonic concepts such as photonic crystals and plasmonic structures, with dimensions well into the sub-micrometer domain. With decreasing dimensions, light-matter interaction becomes stronger, potentially leading to efficient and ultrafast radiative emission, both in the spontaneous and stimulated regime. These features have created wide expectations for the practical prospects of such nanoscale light sources, in particular for optical interconnects. In this article we examine the limits to the downscaling of LEDs and lasers, and ask ourselves which type of source is most suited to ultralow-power optical communications. Based on simple physical considerations on the scaling of spontaneous and stimulated emission rates for semiconductor active regions at room temperature, we analyze the speed and energy limits for nanoLEDs and nanolasers as a function of their size. The role of spontaneous emission enhancement (Purcell effect) in practical nanophotonic sources is also revisited. The main conclusion is that nanoLEDs reach a fundamental energy/speed limit for data rates exceeding a few Gb/s, whereas nanolasers with active dimensions in the range of few 100s nm may enable direct modulation rates larger than 40 Gb/s at power levels adequate for short-distance and low-energy optical interconnects.
arXiv comment13 pages, 8 figures
References in corpus (5)
- Attojoule Optoelectronics for Low-Energy Information Processing and Communications: a Tutorial Review
- Ultra-low threshold, electrically pumped quantum dot photonic crystal nanocavity laser
- Record Performance of Electrical Injection Sub-wavelength Metallic-Cavity Semiconductor Lasers at Room Temperature
- Purcell Effect in the Stimulated and Spontaneous Emission Rates of Nanoscale Semiconductor Lasers
- Dynamical properties of nanolasers based on few discrete emitters
Cited by in corpus (4)
- Surface Passivation of III-V GaAs Nanopillars by Low Frequency Plasma Deposition of Silicon Nitride for Active Nanophotonic Devices
- Methodological investigation into the noise influence on nanolasers' large signal modulation
- "Phase Transitions" in small systems: why standard threshold definitions fail for nanolasers
- Impact of Surface Passivation on the Efficiency and High-speed Modulation of III-V GaAs/AlGaAs Nanopillar Array LEDs