Topological quantum control: Edge currents via Floquet depinning of skyrmions in the graphene quantum Hall antiferromagnet
arXiv:2003.06828 · doi:10.1103/PhysRevB.101.241403
Abstract
We propose a defect-to-edge topological quantum quench protocol that can efficiently inject electric charge from defect-core states into a chiral edge current of an induced Chern insulator. The initial state of the system is assumed to be a Mott insulator, with electrons bound to topological defects that are pinned by disorder. We show that a "critical quench" to a Chern insulator mass of order the Mott gap shunts charge from defects to the edge, while a second stronger quench can trap it there and boost the edge velocity, creating a controllable current. We apply this idea to a skyrmion charge in the quantum Hall antiferromagnet in graphene, where the quench into the Chern insulator could be accomplished via Floquet driving with circularly polarized light.
arXiv comment6 pages including refs, 4 figures
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