Experimental demonstration and analysis of random field effects in ferromagnet/antiferromagnet bilayers
arXiv:2003.06295 · doi:10.1103/PhysRevB.101.144427
Abstract
More than 30 years ago, Malozemoff (Phys. Rev. B 35, 3679 (1987)) hypothesized that exchange interaction at the interface between a ferromagnet (F) and an antiferromagnet (AF) can act as an effective random field, which can profoundly affect the magnetic properties of the system. However, until now this hypothesis has not been directly experimentally tested. We utilize magnetoelectronic measurements to analyze the effective exchange fields at Permalloy/CoO interface. Our results cannot be explained in terms of quasi-uniform effective exchange fields, but are in agreement with the random-field hypothesis of Malozemoff. The presented approach opens a new route for the quantitative analysis of effective exchange fields and anisotropies in magnetic heterostructures for memory, sensing and computing applications.
arXiv commentfunding information and a few typos corrected
References in corpus (14)
- The design and verification of Mumax3
- Antiferromagnetic spintronics
- Magnetization switching by spin-orbit torque in an antiferromagnet/ferromagnet bilayer system
- Spin Seebeck effect through antiferromagnetic NiO
- Electrical Detection of Spin Backflow from an Antiferromagnetic Insulator/Y3Fe5O12 Interface
- Current induced torques in structures with ultra-thin IrMn antiferromagnet
- Random Field XY Model in Three Dimensions
- Random Fields, Topology, and The Imry-Ma Argument
- Spin Orbit Torque in two dimensional Antiferromagnetic Topological Insulators
- Spin configuration in a frustrated ferromagnetic/antiferromagnetic thin film system
- Ordered vs Disordered States of the Random-Field Model in Three Dimensions
- Cooperative Multiscale Aging in a Ferromagnet/Antiferromagnet Bilayer
- Spin glass transition in a thin-film NiO/Permalloy bilayer
- Magnetic freezing transition in a CoO/Permalloy bilayer revealed by transverse ac susceptibility