Large anomalous Nernst and inverse spin-Hall effects in epitaxial thin films of Kagome semimetal MnGe
arXiv:2003.02203 · doi:10.1103/PhysRevMaterials.4.094201
Abstract
Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. MnGe, an antiferromagnetic Weyl semimetal with a chiral magnetic structure on a Kagome lattice, is expected to have enhanced Berry curvature around Weyl nodes near the Fermi energy, leading to large anomalous Hall / Nernst effects and a large spin-Hall effect. Using magnetron sputtering, we have grown epitaxial thin films of hexagonal D0 MnGe that are flat and continuous. Large anomalous Nernst and inverse spin-Hall effects are observed in thermoelectric and spin-pumping devices. The anomalous Nernst signal in our MnGe films is estimated to be 0.1 V / K, and is comparable to that in ferromagnetic Fe, despite MnGe having a weak magnetization of ~3.5 m at room temperature. The spin mixing conductance is 90.5 nm at the Py / MnGe interface, and the spin-Hall angle in MnGe is estimated to be about 8 times of that in Pt.
arXiv comment25 pages, 5 figures
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- Atomic Layer Molecular Beam Epitaxy of Kagome Magnet RMnSn (R = Er, Tb) Thin Films
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