Thermoelectric properties of Mott insulator with correlated hopping at microdoping

Abstract

An influence of the localization of itinerant electrons induced by correlated hopping on the electronic charge and heat transport is discussed for the lightly doped Mott insulator phase of the Falicov-Kimball model. The case of strongly reduced hopping amplitude between the sites with occupied f-electron levels, when an additional band of localized d-electron states could appear on the DOS in the Mott gap, is considered. Due to the electron-hole asymmetry and anomalous features on the DOS and transport function induced by correlated hopping, a strong enhancement of the Seebeck coefficient is observed at low temperatures, when the flattened dependence is displayed in a wide temperature range.

14 pages, 11 figures

References in corpus (6)

• Observation of Density-Induced Tunneling
• Thermoelectricity near Anderson localization transitions
• Electronic thermal transport in strongly correlated multilayered nanostructures
• Formation of charge and spin ordering in strongly correlated electron systems
• Effect of correlated hopping on thermoelectric properties: Exact solutions for the Falicov-Kimball model
• Resonant enhancement of thermoelectric properties by correlated hopping for the Falicov-Kimball model on Bethe lattice