Global solutions and Relaxation Limit to the Cauchy Problem of a Hydrodynamic Model for Semiconductors

Abstract

It is well-known that due to the lack of a technique to obtain the a-priori $L^{\infty }$ estimate of the artificial viscosity solutions of the Cauchy problem for the one-dimensional Euler-Poisson (or hydrodynamic) model for semiconductors, where the energy equation is replaced by a pressure-density relation, over the past three decades, all solutions of this model were obtained by using the Lax-Friedrichs, Godounov schemes and Glimm scheme for both the initial-boundary value problem \cite{Zh1,Li} and the Cauchy problem \cite{MN1,PRV,HLY}; or by using the vanishing artificial viscosity method for the initial-boundary value problem \cite{Jo,HLYY}. In this paper, the existence of global entropy solutions, for the Cauchy problem of this model, is proved by using the vanishing artificial viscosity method. As a by-product, the known compactness framework \cite{MN2,JR} is applied to show the relaxation limit, as the relation time $\tau$ and $\E,δ$ go to zero, for general pressure $P(\rho )$.