Bimolecular Recombination of Charge Carriers in Polar Amorphous Organic Semiconductors: Effect of Spatial Correlation of the Random Energy Landscape

Abstract

We present a simple model of the bimolecular charge carrier recombination in polar amorphous organic semiconductors where the dominant part of the energetic disorder is provided by permanent dipoles and show that the recombination rate constant could be much smaller than the corresponding Langevin rate constant. The reason for the strong decrease of the rate constant is the long range spatial correlation of the random energy landscape in amorphous dipolar materials, without spatial correlation even strong disorder does not modify the Langevin rate constant. Our study shows that the significant suppression of the bimolecular recombination could take place in homogeneous amorphous organic semiconductors and does not need large scale inhomogeneity of the material.

28 pages 5 figures

References in corpus (5)

• Origin of Reduced Polaron Recombination in Organic Semiconductor Devices
• Polaron Recombination in Pristine and Annealed Bulk Heterojunction Solar Cells
• Charge Carrier Transport in Disordered Polymers
• Quadrupolar glass as a model for charge carrier transport in nonpolar organic materials
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Cited by in corpus (2)

• Enhanced Bimolecular Recombination of Charge Carriers in Amorphous Organic Semiconductors: Overcoming the Langevin Limit
• Two-dimensional bimolecular recombination in amorphous organic semiconductors