Comparison of band-fitting and Wannier-based model construction for WSe
arXiv:2001.05959 · doi:10.1557/adv.2020.111
Abstract
Transition metal dichalcogenide materials are being thoroughly studied due to their novel two-dimensional structure, that is associated with exceptional optical and transport properties. From a computational point of view, Density Functional Theory simulations perform very well in these systems and are an indispensable tool to predict and complement experimental results. However, due to the time and length scales where even the most efficient DFT implementations can reach today, this methodology suffers of stringent limitations to deal with finite temperature simulations or electron-lattice coupling when studying excitation states: the unit cells required to study, for instance, systems with thermal fluctuations or large polarons would require a large computational power. Multi-scale techniques, like the recently proposed Second Principles Density Functional Theory, can go beyond these limitations but require the construction of tight-binding models for the systems under investigation. In this work, we compare two such methods to construct the bands of WSe. In particular, we compare the result of (i) Wannier-based model construction with (ii) the band fitting method of Liu and co-workers where the top of the valence band and the bottom of the conduction band are modeled by three bands symmetrized to have mainly Tungsten , and character. Our results emphasize the differences between these two approaches and how band-fitting model construction leads to an overestimation of the localization of the real-space basis in a tight-binding representation.
arXiv comment7 pages, 6 figures
References in corpus (15)
- The SIESTA method for ab initio order-N materials simulation
- Efficient index handling of multidimensional periodic boundary conditions
- Wannier90: A Tool for Obtaining Maximally-Localised Wannier Functions
- Maximally localized Wannier functions: Theory and applications
- Electron-phonon interactions from first principles
- Electrical Control of Two-Dimensional Neutral and Charged Excitons in a Monolayer Semiconductor
- Numerical atomic orbitals for linear scaling
- Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides
- Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
- High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects
- First-principles theory of ferroelectric phase transitions for perovskites: The case of BaTiO3
- Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
- Semiconductor-metal transition in semiconducting bilayer sheets of transition metal dichalcogenides
- Second-principles method including electron and lattice degrees of freedom
- First-principles model potentials for lattice-dynamical studies: general methodology and example of application to ferroic perovskite oxides